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Axetris Europe

Axetris Amerikas


Africa+Middle East

  • Schweiz | DE / EN
  • Deutschland | DE / EN
  • Rest of the World | EN
  • Great Britain | EN
  • Canada | EN
  • USA | EN
  • Rest of the World | EN
  • 中国 | ZH / EN
  • India | EN
  • 日本 | JA / EN
  • 대한민국 | EN
  • Rest of the World | EN
  • Rest of the World | EN

Chip on TO header

Key features for all Axetris infrared sources

  • True black body radiation (2 to 14 μm)
  • High emissivity
  • Fast electrical modulation (no chopper wheel required)
  • High modulation depth
  • Energy efficient (excellent optical output)
  • Superior lifetime

Special EMIRS50 Features (compared to EMIRS200)

  • 3x smaller
  • 2x more efficient
  • 3x faster
  • Excellent signal-to-noise ratio (due to higher frequency) 

Technical Data

Details basic - EMIRS50 on TO46 - back vented + Add to Watchlist + Add to Comparison Print Specifications

Article No. *603.410*

Attribute Unit Value
Socket TO46
Buildup none
Window no window
Working Temperature °C 450°C for 175mW
Emissivity 0.95
Modulation depth % 80% at 50Hz, 50% at 100Hz
Cold Resistance Ω
Hot Resistance Ω 42Ohm (34-56Ohm)* at 175mW
Voltage V 2.7V at 175mW
Current I 64mA at 175mW
* The resistance values stated are values when it was tested initially. Please take note that this given values are subject to change over IR source time of usage.

Item added to watchlist