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Benefits
  • True black body radiation (2 to 14 μm) 
  • High emissivity 
  • Fast electrical modulation (no chopper wheel needed) 
  • High modulation depth 
  • High electrical input to optical output efficiency 
  • Low power consumption 
  • Long lifetime 
  • Rugged MEMS design (passed the requirements of IEC 60721-3-7 Class 7M3, except for BaF2 and CaF2 windows)

テクニカルデータ

Details basic - EMIRS200 on TO39 - back vented + Add to Watchlist + Add to Comparison Print Specifications

商品番号 *603.051*

属性 単位 価値
Socket TO39
Buildup Not available
Window Not available
Working Temperature °C 450 at 450 mW
Emissivity > 0.85
Modulation depth % 80 at 20 Hz, 50 at 50 Hz
Lifetime years > 10; at temperature < 500°C
Cold Resistance Ω 45 (35–55)*
Hot Resistance Ω 72 (54–89)*
Voltage V 5.2 at 450 mW
Current I 86 at 450 mW
* The resistance values stated are the values of the initial testing. Please take note that these given values are subject to change over IR source time of usage.
Details basic - EMIRS200 on TO39 - front vented + Add to Watchlist + Add to Comparison Print Specifications

Item added to watchlist