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TO39 with Reflector3

Benefits
  • True black body radiation (2 to 14 μm) 
  • High emissivity 
  • Fast electrical modulation (no chopper wheel needed) 
  • High modulation depth 
  • High electrical input to optical output efficiency 
  • Low power consumption 
  • Long lifetime 
  • Rugged MEMS design (passed the requirements of IEC 60721-3-7 Class 7M3, except for BaF2 and CaF2 windows)

テクニカルデータ

Details with reflector3 and CaF2 window - front vented + Add to Watchlist + Add to Comparison Print Specifications

商品番号 *601.612*

属性 単位 価値
Socket TO39
Buildup Reflector 3
Window Sapphire, CaF2
Working Temperature °C 450 at 450 mW
Modulation depth % 80 at 20 Hz, 50 at 50 Hz
Emissivity > 0.85
Lifetime years > 10; at temperature < 500°C
Cold Resistance Ω 45 (35–55)*
Hot Resistance Ω 72 (54–89)*
Voltage V 5.2 at 450 mW
Current I 86 at 450 mW
* The resistance values stated are the values of the initial testing. Please take note that these given values are subject to change over IR source time of usage.
Details with reflector3 and no window - front vented + Add to Watchlist + Add to Comparison Print Specifications
Details with reflector3 and sapphire window - front vented + Add to Watchlist + Add to Comparison Print Specifications

Item added to watchlist